Marquee Tag

Dr. N. Mohankumar

Professor, ECE Dept.

B.Tech: – 2000, B. E., Electronics and Communication Engineering, Bharathiyar University, India
M.Tech: -2004, M.E., Electron Devices, Jadavpur University, Kolkata, India.

Ph.D: -2010, Ph.D., VLSI & Nano Technology, Jadavpur University, Kolkata, India


Teaching Experience – 23 Years

JNTU Registration No – 
Ratification Status – 

  1. Ultra-low power analog/RF applications
  1. Compact modeling of Nano-Scale Semiconductor devices.
  2. Electron transport in gallium oxide-based MOSFET.
  3. Quantum transport in low dimensional systems – MOS device physics.
  4. High Electron Mobility Transistors (HEMTs) for High Power and High-Frequency Applications.
  5. Advanced device architectures for terahertz applications.
  6. GaN-based Transistors for Biomedical Sensing
  7. GaN-based Transistors for energy efficient Lighting applications.
  8. Compact Modeling of Advanced HEMTs
  9. InAs-based transistors for Security applications
  10. Study of GaN-based Flip Chip LEDs with improved Quantum Efficiency
  1. Journal Publications – International – 94 (SCI & SI)H-Index–16, i10-index – 38, Citations– 12   (Q1 – 16, Q2 – 26, Q3 – 10, Q4 – 4)



  1. Conference Publications – International & National – 75


  1. Journals Cumulative Impact Factor: 150


  1. WOS Journals with Impact Factor: 81
  1. Senior Member IEEE (2016) and IEEE EDS R10 SRC Vice-chair (2018).
  2. Founder chairman for IEEE Electron Devices Society- Madras chapter (2010 – 2017).
  3. Secretary of IEEE EDS CHAPTER, KOLKATA (2007 – 2009)


  • Registered Guide of Anna University, Chennai.
  • Registered Guide of Jadavpur University, Kolkata.
  • Registered Guide of GITAM University, Bengaluru
  • About Fifty M.E. Students have completed their thesis under my guidance, and about three students are currently working to date.
  1. Mishra, G.S.Mohankumar, N.Singh, S.K.Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensingCurrent Applied Physics, 2023, 49, pp. 83–90.Impact factor: 2.856(SCI-indexed journal).


  1. Sujatha, G., Mohankumar, N., Poornachandran, R., Kumar, R.S., Mishra, G.S., Mahesh, V., Arunkumar, M. “Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics”, Silicon Journal, Pages: 1925-1933, Vol 15 (5), 10.1007/s12633-021-00954-3, 2022.Impact factor: 2.941(SCI-indexed journal).



  1. Sujatha, G., Mohankumar,N.,Poornachandran, R., Saravanakumar, R., Pandian, M.K. “Influence of Barrier with Gate Sinking on the Performance of InAs Composite Channel DMDG-HEMT Devices for High-Frequency Applications”,Silicon Journal,10.1007/s12633-022-01785-6.Impact factor: 2.941(SCI-indexed journal).


  1. Mishra, G.S., Mohankumar, N., Mahesh, V. et al. “Compact Modeling of Schottky Gate-all-around Silicon Nanowire Transistors with Halo Doping”, Silicon 14, 1455–1462 (2022). Impact factor: 2.941(SCI-indexed journal).


  1. Baskaran, S., Saravana Kumar, R., Saminathan, V., Poornachandran, R., Mohan Kumar, N., Janakiraman, V. “Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications”, IETE Journal of Research, 10.1080/03772063.2021.1929517. Impact factor: 1.877(SCI-indexed journal).


  1. Poornachandran, R., Mohankumar, N., Saravana Kumar, R. et al. “Influence of HfAlOxin DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT”, J. Electron. Mater. 50, 3569–3579 (2021). factor: 1.753(SCI-indexed journal).


  1. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh, “Current collapse degradation in GaN High Electron Mobility Transistor by the virtual gate”, Microelectronics Journal, Volume 118, 2021, 105293, ISSN 0026-2692, factor: 1.992(SCI-indexed journal).


  1. KumarManoharan,ArunJayavel,RamasamyShanmugam,MahalingamSengottaiyan,ChinnasamyChinnathambi, Shanmugavel Mohankumar, Nagarajan ; “A Compact Sensory Platform Based pH Sensor Using Graphene Field Effect Transistor”,  Journal of Nanoscience and Nanotechnology, Volume 21, Number 6, June 2021, pp. 3299-3305(7), factor: 0.843(SCI-indexed journal).


  1. Poornachandran, N. Mohankumar, R. Saravanakumar Investigation of High-frequency noise inInAs DG-HEMT for millimeter wave application“, Micro System Technologies Journal, Published,Impact factor: 1.737. (SCI-indexedjournal).


  1. Nirmal Arivazhagan L Godwinraj D N Mohan KumarWen Kuan Yeh, “Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor”, 2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184). IEEE Xplore. DOI No. – 10.1109/ICOEI48184.2020.9142918.


  1. Godfrey, D. Nirmal, D.Godwinraj, L. Arivazhagan, N. Mohankumar, Jerry Tzou, Wen-Kuan Yeh,Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications“, Silicon JournalImpact factor: 1.281.(SCI-indexed journal),


  1. Godfrey, D. Nirmal, L. Arivazhagan, R. Rathes Kannan, P. Issac Nelson, S. Rajesh,B. Vidhya, N. Mohankumar.,A novel ZnPc nanorod derived piezoelectric nanogenerator for energy harvesting“,Physica E: Low-dimensional Systems and NanostructuresVol.118, April 2020.Impact factor: 3.176. (SCI-indexed journal),


  1. Mohankumar, Girish Shankar Mishra, M. Arun Kumar, R. Poornachandran,Performance of Gate Engineered Symmetric Double Gate MOS Devices and circuits for ultra-low power Analog and RF applications“, International Journal of Advanced Trends in Computer Science and Engineering, Vol. 9, No. 2, Pages:1239 -1246, April 2020 (Scopus indexed journal).


  1. Arun Kumar, Nagarjuna Telagam, N. Mohankumar, K. Mohamed Ismail, T. Rajasekar,Design and Implementation of Real-time Amphibious unmanned aerial vehicle system for sowing seed balls in the agriculture field“,International Journal on Emerging Technologies”, Vol. 10, No. 1, Pages:1 – 8,March 2020 (Scopus indexed journal).


  1. Mohankumar, Girish Shankar Mishra, Kakarla Sunil, M. Arun Kumar,Poola Puneeth, R V Charan, R. Poornachandran, D.GodwinrajInGaN based HEMT with Quaternary barrier for High Breakdown and RF applications“,Journal of Xi’an University of Architecture &Technology (ISSN No: 1006-7930) Volume XII, Issue VI, 2020Page No: 1876- 1883,(Scopus indexed journal).


  1. Mohankumar, Girish Shankar Mishra, Dioline Sara, M. Arun Kumar, Mahesh Yadav, Roshan Kumar, R. Poornachandran, D.GodwinrajNoise Analysis of Gallium Nitride HEMTs for RF Applications“, International Journal of Advanced Science and Technology”, Accepted,(Scopus indexed journal).


  1. Nehru Kandasamy, N. MohanKumar, Nagarjuna Telagam, Firdous Ahmad, Girish Mishra Analysis of Self Checking and Self Resetting Logic in CLA and CSA circuits using Gate Diffusion input Technique”, Second International Conference on Smart Systems and Inventive Technology (ICSSIT 2019),IEEE Xplore Part Number: CFP19P17-ART; ISBN:978-1-7281-2119-2 (Scopus Indexed).


  1. Poornachandran, R, Mohankumar, N, Saravanakumar, R & Sujatha, G 2019, ‘Sheet-carrier density and I-V analysis of In7Ga0.3As/InAs/In0.7Ga0.3As/InAs/In0.7Ga0.3As dual channel double gate HEMT for THz applications’, International Journal of Numerical Modelling Electronic Networks, Devices Fields (Wiley), vol. 32, pp. e2625. doi:10.1002/jnm.2625. (Impact factor 0.8).(SCI-indexed journal).


  1. Poornachandran, R, Mohankumar, N, Saravanakumar, R & Sujatha, G 2019, ‘Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT, Journal of Computational Electronics (Springer), doi: 10.1007/s10825-019-01365-9. (Impact factor 1.637).(SCI-indexed journal).


  1. Anbuselvan, P. Amudhalakshmi, N.Mohankumar, “Analytical modeling of2DEG with 2DHG Polarization Charge density drain current and Small-signal model of Quaternary AlInGaN HEMTs for Microwave frequency Applications”,International Journal of Numerical Modelling, March 2019. (SCI-indexed journal).


  1. Anbuselvan, N. Mohankumar, A. Mohanbabu, “Analytical noisecharacterization of quaternary AlInGaN HEMTs”, Journal of Nanoelectronicsand Optoelectronics, Sep 2018.(SCI-indexed journal).


  1. Anbuselvan, P. Amudhalakshmi, N.Mohankumar, “Analytical modeling of2DEG and      2DHG     charge balancing        in quaternary Al0.42In0.03Ga0.55N/Al0.3In0.7N HEMTs”, Journal of ComputationalElectronics, journal).


  1. Bijo Joseph, S.K.Singh, R.M.Hariharan, P.Arunapriya, N.Mohankumar, D.Johnthiruvadigal “Hetero Structure PNPN Tunnel FET: Analysis of ScalingEffects on Counter Doping’, Applied Surface Science, February 2018. factor: 6.58(SCI-indexed journal).


  1. P. Ramesh, N. Mohankumar, “Radiometric Analysis of Ankle Edema via RZFAntenna for Biomedical Applications”,International Journal of WirelessPersonal Communications, Vol. 80, Number 3, Feb 2018. Impact factor: 0.951. (SCI-indexed journal).


  1. Saravanakumar, A. Mohanbabu, N. Mohankumar, “Comparative assessmentof InGaAs sub-channel and InAs composite channel Double gate (DG)-HEMT for Sub-millimeter wave applications”, AEU – International Journal of Electronicsand Communications, Vol. 83, Pages 462-469, January 2018. Impact factor: 1.147. (SCI-indexed journal).


  1. Mohanbabu, R. Saravanakumar, N. Mohankumar, “Noise Characterizationof Enhancement-mode AlGaN Graded barrier MIS-HEMT Devices”,Superlatticesand Microstructures, Vol. 112, Pages 604-618, December 2017. Impact factor: 2.123. (SCI-indexed journal).


  1. Charles Pravin,  Nirmal,  P.  Prajoon,  N.Mohan  Kumar,  J.  Ajayan“Investigation of 6T SRAM memory circuit using high-k dielectrics based nanoscale junctionless transistor” Superlattices and Microstructures Vol. 104, pp.470-476, March. 2017. Impact factor: 2.123. (SCI-indexed journal).(Cited by:2).


  1. SaravanaKumar, A.Mohanbabu, N.Mohankumar, “Simulation of InGaAs Sub-channel DG-HEMT for analog/RF application“, International Journal ofElectronics, Taylor and Francis journal, pp. 1-11, Sep. 2017., Impact factor: 0.55. (SCI-indexed journal).


  1. SaravanaKumar, A.Mohanbabu, N.Mohankumar, D.GodwinrajIn0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel Double Gate (DG)-HEMT Devices for High-Frequency Applications, Journal of computational electronics, Vol. 16,issue. 3, pp. 732-740, Sep. 2017. Impact factor: 1.526. (SCI-indexed journal).


  1. Mohanbabu A, Mohankumar N, Godwin Raj D, Sarkar P, Saha SK. “Devicecharacteristics of enhancement mode double heterostructure DHHEMT with borondoped GaN gate cap layer for fullbridge inverter circuit”.Int J NumerModel. pp. 1-15; Vol. e2276, August 2017, Impact factor: 0.68. (SCI-indexed journal).


  1. Mohanbabu, N.Mohankumar, D.Godwin raj, Partha Sarkar, Investigationof enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications”,PHYSICA E Journal, pp. 23-29, Vol. 92, Aug. 2017. Impact factor: 1.9. (SCI-indexed journal).(Cited by:2)


  1. Baskaran, A.Mohanbabu, N.Mohankumar“Analysis and Impact of Al moleconcentration „x‟ in Double Heterojunction AlGaN with Source and Gate Field plated HEMT for High breakdown and High-Frequency applicationsGlobalJournal of Pure and Applied Mathematics (GJPAM), Vol. 13, no. 10, pp. 7339-7352, (2017). Impact factor: 0.61.


  1. Baskaran, A.Mohanbabu, N.Mohankumar, A Charge Based Compact PhysicalModel with Unified 2DEG for AlGaN/AlN/GaN MISHEMTs including SCEs“.International Journal of Control Theory and Applications, Vol.10, no. 36, pp. 11-29, (2017). Impact factor: 0.61.


  1. Mohanbabu, N.Mohankumar, D.GodwinRaj, Partha Sarkar, Samar K. Saha Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuitsSuperlattices and Microstructures,Vol. 103, pp. 270-284, Mar. 2017. Impact factor: 2.04. (SCI-indexed journal).(Cited by:3)


  1. Anandan, V.Saranya, N.Mohankumar, “Characterization of Flicker noise inDual Material Gate Silicon Nanowire TransistorsJournal of Nanoelectronicsand Optoelectronics, Vol. 12, no. 1, pp. 72-75, Jan. 2017.Impact Factor 0.369. (SCI-indexed journal).


  1. A, Mohankumar.N“Context-sensitive trust-based geographic routing inmobile Adhoc networks”,Sadhana- Academy proceedings in engineeringscience, Vol. 41, issue 11, pp. 1261-1274, Nov. 2016. Impact Factor: 0.349. (SCI-indexed journal).(Cited by:1)


  1. Raji, N.Mohan Kumar, Void Aware Position Based Opportunistic Routingfor QoS in Mobile Ad Hoc NetworksJournal of Circuits and Systems, 7, 1504-1521, June 2016.(Cited by:1)


  1. A, Raji.V,  Mohankumar.N“Subjective Logic-based Trust  Model forGeographic Routing in Mobile Adhoc Networks”,Tehnickivjesnik-technicalgazette journal, Vol. 24, no. 4. pp. 1357-1364, May. 2016. Impact Factor: 0.464. (SCI-indexed journal).


  1. Raji, N.Mohankumar, Network Capacity based Geographical Forwarding forMultimedia Streams over MANETsJournal of Internet Technology,Vol. 17, no.3, May. 2016. Impact Factor 0.481. (SCI-indexed journal).


  1. Kumaresan, P.Selvaraj, S.Mohanraj, N.Mohankumar, and M.SureshAnand.,Application of L- NAM Speech in Voice AnalyserJournal of Advances inNatural and Applied Sciences, Vol. 10, no. 5, pp. 172-179, April 2016.


  1. Saravanakumar, Dr.N.Mohankumar, Steadfast Energy proficient SensorNode Activation System in Wireless Networks Lifetime EnhancementJournalsof Circuits and Systems, Vol.7, no. 4, pp. 402-416, April 2016. Impact Factor: 0.47.


  1. Jebalin, ShobhaRekh, Prajoon.P, N.Mohankumar, and Nirmal.DTheinfluence of High-k passivation layer on the Breakdown voltage of Schottky AlGaN/GaN HEMTsMicroelectronics Journal,Vol. 46, Issue 12, December 2015,Pages 1387–1391. Impact Factor 0.924. (SCI-indexed journal).(Cited by:8)


  1. Nagarajan, Reebakorah, N.Mohankumar, and C.K.SarkarAnalytical Model ofSymmetric Halo Doped DG-Tunnel FET”,Journal of Engineering Science andTechnology Review, Vol. 8, no. 4, pp. 125 – 130, November 2015. Impact Factor: 0.93.


  1. Theodore Chandra, N. B.Balamurugan, M.Bhuvaneswari, N. Anbuselvan, N.Mohankumar,Analysis of charge density and Fermi levelof AlInSb/InSbsingle-gate high electron mobility transistorJournal of Semiconductors, Vol. 36,No. 6, June 2015. Impact factor: 0.50.(Cited by:1)


  1. Mohanbabu, N.Mohankumar, S.Baskaran, P.Anandan, N.Anbuselvan and P.BharathivikkiramanModeling of Sheet Carrier Density, DC andTransconductance of Novel InxAl1-XN/GaN-Based HEMT StructuresAdvancedMaterials Research, Vol. 1105, pp 99-104, May 2015. Impact Factor: 0.23.


  1. Godwin Raj, Mohankumar, and Chandan Kumar Sarkar Threadingdislocation degradation with InSb to InSbAs subchannel Double HeterostructuresElectronic Materials Letters. July 2015, Vol. 11, Issue 4, pp 580-585.Impact Factor 1.98. (SCI-indexed journal).


  1. Dutta, B.Syamal,  K.Kalyan,  N.Mohankumar,  and  C.K.Sarkar,  A  NewThreshold Voltage and Drain Current Model for Lightly / Heavily Doped Surrounding Gate MOSFETsJournal of Computational and TheoreticalNanoscience (CTN), Vol. 12, no. 9, pp. 2515-2522, Impact Factor 1.032. (SCI-indexed journal).


  1. Jebalin, ShobhaRekh, Prajoo.P, Godwinraj.D, N.Mohankumar,Nirmal.DUnique Model of Polarization engineered AlGaN/GaN Based HEMTs for HighPower ApplicationsJournal of Superlattices and microstructures,Vol. 78, pp.210–223, February 2015.Impact Factor 1.979. (SCI-indexed journal).(Cited by:12)


  1. Anandan, A.Nithya,  N.MohankumarSimulation of  Flicker  Noise inGate-All-Around  Silicon  Nanowire  MOSFETs including  Interface  Traps” Microelectronics Reliability, Vol. 54, Issue 12, pp. 2723–2727, December 2014,(Impact Factor 1.214). (SCI-indexed journal).


  1. Nirmal, P.Vijaya Kumar, K.Shruti, N.Mohankumar, “A Review of Nanoscale Channel and Gate Engineered FINFETs for VLSI Mixed Signal Applications Using Zirconium-di-Oxide Dielectrics” Journal of Engineering Science andTechnology Review, Vol. 7, no. 2, pp. 119-124, Jul 2014. Impact factor: 0.93.(Cited by:3)


  1. Anandan, N.Malathi, N.Mohankumar, “Modeling of Temperature-DependentNoise in Silicon Nanowire FETs including Self-Heating Effects”, Modelling andsimulation Engineering, Hindawi Publication Corporation, Article ID 635803, pp. 7, 2014. Impact Factor: 0.58.


  1. Anandan, N.Mohankumar“Optimization and characterization of  GateElectrode Dependent Flicker Noise in Silicon Nanowire Transistors” Journal ofElectrical Engineering & Technology, Vol. 9, No.4, pp. 1343-1348, 2014. Impact Factor 0.579.(Cited by:1)


  1. Raji, N.Mohankumar, “An Effective Stateless QOS Routing for MultimediaApplications in MANET” International Journal of Wireless and MobileComputing, Vol. 7, Issue 5, pp. 456-464, Sep. 2014. Impact Factor: 0.69.


  1. Gnanavel, S.Ramakrishnan, N.Mohankumar, “Wireless Video TransmissionOver UWB Channel Using Fuzzy Based Rate Control Technique” Journal ofTheoretical and Applied Information Technology, Vol. 60, No.3. pp. 491-503, Feb. 2014. Impact Factor: 0.33.


  1. Sudhanu Kumar Pati, Kalyan Koley, Arka Dutta, N.Mohankumar, Chandan K. Sarkar, “Study of body and oxide thickness variation on analog and RFperformance of underlap DG-MOSFETs” Journal of Microelectronics Reliability,Vol. 54, issue 6-7, pp. 1137-1142, Jan 2014. Impact Factor: 1.41. (SCI-indexed journal).(Cited by:12)


  1. A, N.Mohankumar,“Multi-Level Trust Architecture For Mobile AdhocNetworks Based On Context-Aware” Journal of Theoretical and AppliedInformation Technology, Vol. 59, no.2, pp. 275-290, Jan. 2014. Impact Factor: 0.33.


  1. Mohanbabu, N.Anbuselvan, N.Mohankumar, Godwin Raj, Chandan Kumar Sarkar “Modeling of Sheet carrier density and Microwave frequencycharacteristics in Spacer based AlGaN/AlN/GaN HEMT Devices”, Journal ofSolid State Electronics, Vol. 91 pages 44–52, (2014). Impact Factor 1.514. (SCI-indexed journal).(Cited by:11)


  1. Baskaran, A.Mohanbabu, N.Anbuselvan, N.Mohankumar, Godwin Raj, Chandan Kumar Sarkar “Modeling of Sheet carrier density and DCcharacteristics in Spacer based AlGaN/AlN/GaN HEMT Devices”,Journal ofSuperlattices and microstructures, Vol. 64, pp. 470–482, (2013). Impact Factor1.979. (SCI-indexed journal).(Cited by:8)


  1. Sudhansu Kumar Pati, Kalyan Koley, Arka Dutta, Mohankumar, Chandan Kumar Sarkar A New Approach to Extract the RF Parameters of AsymmetricDG MOSFET with NQS Effect”,Journal of Semiconductors- IOP Publishers. Vol.34, no. 11, Nov. 2013. Impact Factor: 0.5.(Cited by:1)


  1. HemantPardeshi, Godwin Raj, Sudhansu Pati, Mohankumar, Chandan Kumar SarkarInfluence of barrier thickness on AlInN/GaNUnderlap DG MOSFETdevice performance”,Superlattices and Microstructures, Vol. 60, pp. 47-59, 2013.Impact Factor 1.979. (SCI-indexed journal), (Cited by: 14).


  1. Saravanakumar, J.Raja, N.Mohankumar, Prolonging the Lifetime of WirelessNetworks Using an Optimal Cluster Head Selection Technique Adopted Node Activation Protocol”,PrzegladElektrotechniczny, Impact Factor 0.244.


  1. Saravanakumar, J.Raja,N.Mohankumar, An Optimal Cluster Head SelectionTechnique Adopted Node Activation Protocol for Lifetime Improvement in Wireless Sensor NetworksInternational Review on Computers and Software,Vol. 8, No.6, June 2013.(Cited by:2)


  1. Saravanakumar, J.Raja,   N.Mohankumar,   Proficient   Node   SchedulingProtocol for Homogeneous and Heterogeneous Wireless Sensor NetworksInternational Journal on Distributed Sensor Networks, 2013, Article ID 826482. Impact Factor 0.923. (SCI-indexed journal).(Cited by:3)


  1. Hemant M Pardeshi, Godwin Raj, SudhansuPati, Mohankumar, Chandan Kumar Sarkar Performance assessment of gate material engineeredAlInN/GaNUnderlap DG MOSFET for enhanced carrier transport efficiencySuperlattices and Microstructures, Vol. 60, pp.10-12. Impact Factor 1.979. (SCI-indexed journal),(Cited by: 14).


  1. Dutta, Binit  Syamal,  N.Mohankumar,  and  C.K.  Sarkar,A  2-D  SurfacePotential Based Threshold Voltage Model for Short Channel Asymmetric Heavily Doped DG MOSFETsaccepted in International Journal of NumericalModelling: Electronic Networks, Devices, and Fields, Vol. 27, no. 4, July/August 2014, Pages 682-690. Impact Factor 0.629. (SCI-indexed journal).(Cited by:4)


  1. Godwin Raj, HemantPardeshi, Sudhansu Kumar Pati, Mohankumar, N. Chandan Kumar Sarkar 2DEG charge density based drain current model fornano-scale AlInGaN/AlN/GaN HEMT Devices”,Springer Journal, 2013.(SCIindexed journal).(Cited by:4)


  1. Nirmal, P.Vijayakumar and Shruthi, N.Mohankumar, Nanoscale channelengineered double gate MOSFET for mixed-signal applications using high-k dielectric”,International Journal of circuit theory and Applications, Vol. 41, Issue6, pp. 608–618, June 2013. (Impact Factor 1.21), (Cited by: 13)


  1. Sudhansu Kumar Pati, Godwin Raj, HemantPardeshi, Mohankumar, N. Chandan Kumar Sarkar Flicker and Thermal noise in an n-channel underlap DGFinFET in a weak inversion region”,Journal of semiconductors, Vol. 34, No.2,Feb.2013.(Cited by:3)


  1. Sudhansu Kumar Pati, D. Godwinraj, HemantPardeshi, Mohankumar, Chandan Kumar SarkarImpact of gate length and barrier thickness ontheperformance of InP/InGaAs based Double Gate Metal–Oxide-Semiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET)”,Journal ofSuperlattices and Microstructures, Vol. 55, 2013, pp.8-15. (Impact Factor 1.979). (SCI-indexed journal).


  1. Godwinraj, HemantPardeshi, Sudhansu Kumar Pati, N. Mohankumar Chandan Kumar Sarkar Polarization based charge density drain current andsmall-signal model for nano-scaleAlInGaN/AlN/GaNHEMT”,Superlattices andMicrostructures, vol54, 2013, pp.188-203. (Impact Factor 1.979), (SCI-indexed journal).(Cited by:4)


  1. HemantPardeshi, Godwin Raj,Sudhansu Kumar Pati, N, Mohankumar, Chandan Kumar Sarkar Effect of underlap and gate length on deviceperformance of an AlInN/GaN underlap MOSFET”,Journal of semiconductors,Vol 33, No.12, Dec.2012.(Cited by: 17).


  1. Nirmal, P.Vijayakumar, Divya Mary Thomas and Binola K Jebalin, N.Mohankumar,Sub-threshold performance of gate engineered FinFET devicesand circuit with high-k dielectrics”,International Journal of MicroelectronicsReliability, Vol. 53, Issue 3, Mar. 2013, pp. 499–504.(Impact Factor 1.214). (SCI-indexed journal), (Cited by: 22).


  1. Godwinraj, Hemant Pardeshi, Sudhansu Kumar Pati, N. Mohankumar, Chandan Kumar Sarkar Physics-based Charge and drain current model forAlGaN/GaN HEMT Devices”,Journal of Electron Devices, Vol. 14,2012, pp. 1155-1160. (SCI-indexed journal).(Cited by:2)


  1. HemantPardeshi, Sudhansu Kumar Pati, Mohankumar, Chandan Kumar Sarkar Investigation of asymmetric effects due to gate misalignment, gatebiasand underlap length in III-V heterostructure under lap DG MOSFET”,Physica E,Vol. 46, 2012, pp. 61-67. (Impact Factor 1.856) (SCI-indexed journal).(Cited by:8)


  1. HemantPardeshi, Sudhansu Kumar Pati, Mohankumar, Chandan Kumar Sarkar Comparative assessment of III-V Heterostructure and silicon Underlap double gate MOSFETs”,Journal of Physics of semiconductors, Vol.46,No.10,2012, pp.1299-1303. (SCI-indexed journal) (Cited by:7)



  1. Nirmal, P.Vijayakumar, P.PatrickChella Samuel and Binola K Jebalin, N.Mohankumar,Subthreshold Analysis of Nanoscale FinFETs for Ultra LowPower Application using High-k Materials”,International Journal of Electronics,Volume 100,Issue 6, 2013. (Impact Factor 0.751), (SCI-indexed journal).(Cited by:16).


  1. BinitSyamal, KalyanKoleyAtanuKundu,   Mohankumar,   and   C.K.Sarkar, Subthreshold analog/RF performance of underlap DG-FETs with asymmetricsource/drain extensions”,Microelectronics Reliability,Volume 52, Issue 11,November 2012, Pages 2572–2578. (Impact Factor 1.214), (SCI indexed journal),(Cited by: 19).


  1. Dutta, BinitSyamal, N.Mohankumar, and C.K. Sarkar A surface potentialbased drain current model for asymmetric double gate MOSFETs”,Solid StateElectronics, Vol. 56, Issue 1, Feb. 2011, pp. 148-154. (Impact Factor 1.514) (SCI-indexed journal).(Cited by:8)


  1. Mohankumar, BinitSyamal, and C.K. SarkarInfluence of Channel and GateEngineering on the Analog and RF Performance of DGMOSFETs,”published inIEEE Transactions on Electron Devices, Vol.57, Issue 4, April 2010, PP.820-826. (Impact Factor 2.358), (SCI-indexed journal), (Cited by: 95).


  1. Mohankumar, BinitSyamal and   C.K.Sarkar,Investigation of   NovelAttributes of Single Halo Dual-Material Double Gate MOSFETs for Analog/RF Applications”,published in Micro Electronics Reliability, Volume 49, Issue 12,December 2009, Pages 1491-1497. (Impact Factor 1.214), (SCI-indexed journal), (Cited by: 31).


  1. Mohankumar, BinitSyamal, and C.K.Sarkar,Performance and Optimizationof Dual Material Gate (DMG) Short Channel BULK MOSFETs for Analog/Mixed Signal Application,International Journal of Electronics, Vol. 96, No.6, pp. 603-611, June 2009. (Impact Factor 0.751), (SCI-indexed journal).(Cited by:7)


  1. Godwin Raj, Mohankumar, Chandan Kumar Sarkar, Polarization andBreakdown Analysis of AIGaN Channel HEMTs with AIN BufferInternational Journal of Condensed Matter Physics, Jan 2015. (SCI-indexed journal).


  1. Mishra, G.S.Mohankumar, N.Singh, S.K.Vamsi, M.Reddy, D.S.CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free BiosensingProceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022, 2022.


  1. Sriramani, P.Mohankumar, N.Prasamsha, Y.Unified Surface Potential Based Analytical Modeling of Symmetrical Double Gate AlGaN/GaN MOS-HEMT for Label-Free Bio-SensingProceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022, 2022.


  1. Sriramani, P.Mohankumar, N.Prasamsha, Y.Analytical modeling of Current Spreading Length in Flip chip GaN LEDs, Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022, 2022.


  1. Rajeshkannan, S.Mishra,S.Ganesh Babu, T.R.Mohankumar, N.Effective Parametric Image Sequencing Technology with Aggregate Space Profound TrainingJournal of Physics: Conference Series, 2021, 1964(6).


  1. Mishra, S.Rajeshkannan, S.Mohankumar, N.Ganesh Babu, T.R.VLSI based Implementation of Channel oriented ICA Processor for Biomedical systemsJournal of Physics: Conference Series, 2021, 1964(6).


  1. Saravana Kumar, R.Mohankumar, N.Baskaran, S.Poornachandran, R.Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric MaterialsLecture Notes in Networks and Systems, 2021.


  1. Vellingiri, S.Soundararajan, R.Mohankumar, N.Nithyananthakumar,K.Muthuselvam, K.Exploration on WEDM process parameters effect on LM13 alloy and LM13/SiC composites using Taguchi methodMaterials Today: Proceedings


  1. Godfrey, D.Nirmal, D.Arivazhagan, L., …Kumar, N.M.Yeh, W.KStrain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility TransistorProceedings of the 4th International Conference on Trends in Electronics and Informatics, ICOEI 2020, 2020.


  1. Kandasamy, N.Mohan Kumar, N.Telagam, N.Ahmad, F.Mishra, G.Analysis of Self Checking and Self Resetting Logic in CLA and CSA Circuits Using Gate Diffusion Input TechniqueProceedings of the 2nd International Conference on Smart Systems and Inventive Technology, ICSSIT 2019.


  1. Saravana Kumar, R.Rubesh Anand, P.M.Karthick, S., …Poornachandran, R.Mohan Kumar, N.Performance Analysis of Enhancement Mode Composite Channel MOSHEMT Device for Low Power Applications” Proceedings of the 2019 International Conference on Advances in Computing and Communication Engineering, ICACCE 2019.


  1. Poornachandran, R.Mohankumar, N.Saravana Kumar, R.Baskaran, S.Kumutha, SNoise Characterization of InAs Based DG-HEMT Devices for RF Applications Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018.


  1. Mohanbabu, N.Mohankumar“Recessed Mg-doped P-type In0.2Ga0.8N cap GateAlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications”, Inventive Computation Technologies (ICICT), Jan. 2017.


  1. Sheerin Begum, J.Vijayashree, A.Mohanbabu, N. Mohankumar “Investigation of the performance of InAsSb based high electron mobility transistors (HEMTs)”Devices for Integrated Circuit (DevIC), Oct. 2017.


  1. Ranjani, R.Vaishnavi, N.Mohankumar, A.Mohanbabu“Effect of gate lengthon the performance of InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices”, Devices for Integrated Circuit (DevIC), Oct. 2017.


  1. AchsahGladith, B.Sinduja, A.Mohanbabu, N.Mohankumar“DC, RF andnoise figure analysis of p+ In0.2Ga0.8N cap gate AlGaN DH-HEMT”, Devices forIntegrated Circuit (DevIC), Oct. 2017.


  1. Tamilselvi, S.Tamilarasi, A.Mohanbabu, N.Mohankumar“Analysis of noiseperformance in InAs DG-MOSHEMT”, Devices for Integrated Circuit (DevIC),Oct. 2017.
  1. A book in“Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications”by Dr. N. Mohankumar, CRC Press, Taylor & Francis Group, LLC, 6000Broken Sound Parkway NW, Suite 300, Boca Raton, Florida 33487, U.S.A.
  2. A book chapter in “Technology Computer Aided Design: Simulation for VLSIMOSFET” by Prof. C.K.Sarkar, CRC Press, Taylor & Francis Group, LLC, 6000Broken Sound Parkway NW, Suite 300, Boca Raton, Florida 33487, U.S.A.
  1. Established Research Center (CENTER FOR EXCELLENCE IN VLSI & NANO-ELECTRONICS)Established a center for excellence in the field of VLSI andNanotechnology for One Crore Rupees in S.K.P Engineering College.Tiruvannamalai.
  2. Institution collaboration with international research labs (MOU) MOU withFrontier Research Labs of Tokyo Institute of Technology, Japan with S.K.PEngineering College in November – 2009 &MOU with New Jersey Institute ofTechnology, New Jersey, USA with S.K.P Engineering Collegein Decemeber-2010.
  3. Organized International workshops and conferences(IW NANO–2011 and ICEVENT – 2013) with IEEE Technical Sponsorship through IEEE EDS.
  4. Coordinator of NAAC and NBA visits SKP Engineering College, Tiruvannamalai.
  5. Served as a Head of Department PG Studies (ME–VLSI Design and ME–Applied Electronics)SKP Engineering College–Tiruvannamalai andproducedmore than 50 University Rank Holders with ME Gold Medal in VLSI Design (2012 Batch).
  1. An Intelligent Indian Sign Language Recognition System with Hybrid Classification Approach Using NAM – Published